This tutorial provides an overview of semiconductor industry's achievement, introduces TSMC's 3D Fabric advanced system integration which consists of CoWoS (Chip-on-Wafer-on-Substrate), InFO (Integrated Fan-Out), and SoIC (System-on-Integrated-Chip), discusses reliability challenges and failure modes in advanced packaging, and reviews methdologies (measurement, charaterization, and modeling) accompanied by case studies.

Tutorial 1: Reliability Challenges in 3DIC Packaging

This tutorial examines the main reliability aspects of GaN power HEMTs, focusing on key device elements such as buffer layers and gate structures. It outlines mechanisms that limit device reliability and stability, along with dynamic behavior and trapping effects, their characterization, and impact on the device performance. It will provide a concise perspective on principles essential for ensuring efficient and reliable operation in advanced GaN power electronics.

Tutorial 2: A Review of Reliability in GaN Power HEMTs

This tutorial provides an overview of resistive random-access memory (RRAM) as a next-generation memory solution, highlighting its high scalability, low power consumption, fast switching speed, and strong potential for future in-memory computing. We will explore both linear and nonlinear RRAM devices enabled by oxide thin films, microstructural modulation, and low-dimensional heterogeneous integration. Specific focuses will include the reliability challenges on 1R-only RRAM configuration, where intrinsic nonlinearity facilitates scalable, energy-efficient, high-density storage, and high-performance computing applications.

Tutorial 3: Resistive Random Access Memory for High Density Storage and Computing Applications

Modern semiconductor products support various applications, diverse functionality, and increased performance and reliability requirements, resulting in technology scaling to ever-shrinking dimensions with novel materials, device architectures, and packaging. As a result, the industry is moving to a system-in-package approach. Comprehensive, cost-efficient testing is necessary to minimize escapes. Reliability requirements necessitate collaboration among various stakeholders. This talk will explore key considerations, including machine learning and artificial intelligence, for system-in-package reliability and test, to ensure successful products.

Tutorial 4: Reliability and Test of System-in-Package Semiconductors in the AI Era

Tutorial 5: Radiation Effects in GaN

This tutorial will demonstrate how machine learning and deep learning techniques can significantly accelerate reliability analysis across the entire design stack—from TCAD simulations to the final GDS level of advanced chips. We will highlight how aging-induced degradations and self-heating effects can be modeled and estimated with high accuracy at the GDS level, even for highly complex designs such as full processors under workload-induced activities and advanced AI accelerator IPs.

Tutorial 6: Journey with AI for Reliability Estimation from Transistors to GDS

Hyperscale datacenters are evolving rapidly with the adoption of next-generation technologies such as high TDP XPUs (GPU/AI ASICs etc), advanced electrical and optical scale-up & scale-out interconnects, direct-to-chip liquid cooling, etc. These innovations enable unprecedented performance but introduce new reliability challenges across thermal, electrical, and mechanical domains. This talk examines the methods, metrics, and models for ensuring robust reliability in this dynamic environment. Key topics include: Impact of Emerging Technologies on reliability—high-density packaging, advanced cooling, and power delivery; Failure Mechanisms and Stress Factors in modern server and interconnect hardware; Quantitative Reliability Metrics for uptime, MTBF, and component-level qualification; Accelerated Life Testing for high-performance systems; Design-for-Reliability Strategies to mitigate risks in advanced datacenter architectures.

Tutorial 7: Reliability Engineering for Hyperscale Datacenters: Methods, Metrics, and Models

This tutorial provides the audience with insight into the reliability status of SiC power devices. The following topics will be addressed: Characterization of the SiC/SiO2 interface by charge pumping and ultra-fast BTI measurements Identification of the physical nature of the interface point defects through electrically detected magnetic resonance Gate Switching instability Gate oxide reliability (TDDB) and lifetime. Comparison of SiC/SiO2 to Si/SiO2Reverse bias reliability Cosmic ray susceptibility Short circuit withstanding time Bipolar degradation.

Tutorial 8: Introduction to SiC Power MOSFET Technology and Reliability

Tutorial 9: BEOL

We will first explain foundational DFT concepts like DFT, ATPG, BIST, and IFS; then review other sources of systemic data like sensors and monitors. Next, we will take a brief look at how to extract these sources of information and use them in-system or for fleet monitoring, focusing on both SLM and DFT data sources. Lastly, we will look at a few case studies (e.g., cell characterization, and reliability prediction) and future trends.

Tutorial 10: What Can In-System Test and SLM Data Bring to the Reliability Community?

**IRPS 2026 Tutorials will be held in Tucson, Arizona from March 22 to 23, 2026. The IRPS Reliability Year in Review (YIR) session consists of three presentations reviewing the past year's reliability work by experts in the field for areas of high interest. It is a nice augmentation to the tutorials sessions immediately preceding and attendees may obtain keen reliability insights in short amount of time.** 

[![](https://assets.underline.io/markdown_image/1/image/0e7e53bc236260859acdf70a1e108543.png)](https://underline.io/events/509/reception)
[![](https://assets.underline.io/markdown_image/1/image/7c1dd0604ccf03e62c8dcef8e9d16ba9.png)](https://www.irps.org/)

**About IRPS** 

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

You need to log in with the email address you registered with. Access credentials have been sent to your email. 

Please be sure to check your spam and other email folders if you do not see an email confirmation right away.

Please log in to explore this event.

It looks like you are not registered for this event. 

To access the site, please log in using the email address you registered with or in case you are not yet registered, you can still register [**here**](https://www.irps.org/registration-fees). 

Please register!

IRPS 2026 Tutorials and YIR

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

Do you have any other suggestions or comments?

Your vote has been successfully recorded.